Abstract: The paper analyzes an one dimensional current coupled hybrid model for semiconductors consisting of a drift-diffusion model and a quantum transmitting Schroedinger-Poisson system. The model is discretized which leads to a dissipative hybrid model consisting of a drift-diffusion model and a dissipative Schroedinger-Poisson system. It is shown that the dissipative hybrid model admits always a solution with constant current densities. All solutions are uniformly bounded where the bound depends only on the data of the hybrid model. The current densities are different from zero iff the boundary values of the electro-chemical potentials are different. The model can be used to describe resonant tunneling diodes. Numerical results are in good agreement with experimental data. In particular, the phenomena of negative resistance is present.